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| AP4435D Advanced Power Electronics Corp. Low On-resistance Fast Switching Speed PDIP-8 Package D D D D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID G S S S -30V 20m -9A PDIP-8 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating - 30 20 -9 - 5.8 - 50 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 50 Unit /W Data and specifications subject to change without notice 201114031 AP4435D Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions Min. -30 -1 - Typ. -0.03 Max. Units 20 35 -3 -1 -25 100 42 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF VGS=0V, ID=-250uA Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VGS=-10V, ID=-9A VGS=-4.5V, ID=-5A VDS=VGS, ID=-250uA VDS=-10V, ID=-9A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= 20V ID=-9.0A VDS=-24V VGS=-4.5V VDS=-15V ID=-1A RG=3.3,VGS=-10V RD=15 VGS=0V VDS=-25V f=1.0MHz 8.2 26 6 16 14 13 70 48 580 160 Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 1330 2100 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=-9.0A, VGS=0V IS=-9.0A, VGS=0V, dI/dt=100A/s Min. - Typ. 44 70 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Mounted on min. copper pad , t <10sec. AP4435D 100 80 T A =25 o C 80 -10V -8.0V 60 T A =150 C -ID , Drain Current (A) o -10V -8.0V -ID , Drain Current (A) -6.0V 40 60 -6.0V 40 20 -4.5V V G =-4.0V 20 -4.5V V G = - 4.0V 0 0 1 2 3 4 5 6 7 0 0 1 2 3 4 5 6 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 40 1.8 I D = - 5.0 A 35 T A =25 o C 1.6 I D =-9.0A V GS =-10V Normalized RDS(ON) 1.4 RDS(ON) (m ) 30 1.2 25 1.0 20 0.8 15 3 5 7 9 11 0.6 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.5 8 7 2.25 6 5 -IS(A) 4 -VGS(th) (V) 1.2 2 1.75 T j =150 o C 3 T j =25 o C 1.5 2 1.25 1 0 0 0.2 0.4 0.6 0.8 1 1 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4435D f=1.0MHz 12 10000 10 I D =-9.0A V DS =-24V -VGS , Gate to Source Voltage (V) 8 C (pF) Ciss 1000 6 Coss 4 2 Crss 0 0 10 20 30 40 50 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 10 1ms 0.2 0.1 0.1 10ms -ID (A) 1 0.05 100ms 1s 0.1 0.02 0.01 PDM 0.01 t Single Pulse T A =25 C Single Pulse DC o T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=90oC/W 0.01 0.001 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance VDS 90% VG QG QGS QGD -4.5V 10% VGS td(on) tr td(off)tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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